Raman measurements of dilute nitride alloys GaP(As)N grown on GaP substrates

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Lazarenko, A.^1 ; Pirogov, E.^1 ; Sobolev, M.^1 ; Bukatin, A.^1 ; Nikitina, E.^1

Nonoelectronics Lab, St. Petersburg Academic University, St. Petersburg

194021, Russia^1

关键词: Dilute nitride alloys;    Dilute nitrides;    Elastic stress;    GaP substrates;    High resolution X ray diffraction;    Intensity ratio;    Phonon peaks;    Raman measurements;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012005/pdf
DOI  :  10.1088/1742-6596/741/1/012005

来源: IOP

【 摘 要 】

The structural properties of GaP(As)N dilute nitrides alloys grown on GaP substrates by molecular-beam epitaxy are investigated. The samples were studied by Raman scattering and high-resolution X-ray diffraction. In this work the impact of lattice mismatch of GaP(As)N layer and GaP substrate on the form of the spectrum of Raman scattering of samples was detected. It was shown that the addition of arsenic in solid solution GaPAsN can compensate the elastic stresses in the crystal lattice, and we can estimate the lattice mismatch between epitaxial layer GaP(As)N and GaP substrate by the intensity ratio of LOX/TOrphonon peaks.