Influence of the addition superlattices on the luminescence processes in nano-heterostructures based on nitrides

16th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Menkovich, E.A.^1 ; Tarasov, S.A.^1 ; Solomonov, A.V.^1 ; Suihnonen, S.^2 ; Svensk, O.^2 ; Riuttanen, L.^2 ; Nykanen, H.^2

Saint-Petersburg Electrotechnical University lETI, Prof. Popova 5, St. Petersburg

197376, Russia^1

Department of Micro and Nanosciences, Aalto University, Micronova, PL 13500, Aalto

00076, Finland^2

关键词: Active regions;    Barrier layers;    Effect of addition;    Elastic stress;    Luminescence process;    Nano-heterostructures;    Piezo-electric fields;    Radiation intensity;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/572/1/012035/pdf
DOI  :  10.1088/1742-6596/572/1/012035

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

The effect of addition of superlattice (SL) and the structure of the upper barrier layer on the luminescence processes occurring in light-emitting nanoheterostructures was studied. It was shown that the optimum is using of structures with two SL: InGaN / InGaN structure in the lower part and the AlGaN / GaN for the top p-layer. It is shown that the using of the SL InGaN / InGaN in the vicinity of the active region optimally compensate the elastic stresses and the piezoelectric field at the hetero boundaries. Such compensation of elastic stresses reduces the formation of dislocations in these structures, which increases the radiation intensity.