| 5th International Symposium on Coherent Optical Radiation of Semiconductor Compounds and Structures | |
| Diode lasers with front surface high-order distributed Bragg reflector | |
| Zolotarev, V.V.^1 ; Leshko, A Yu^1 ; Sokolova, Z.N.^1 ; Lubyanskiy, Ya V^1 ; Pikhtin, N.A.^1 ; Nikolaev, D.N.^1 ; Shamakhov, V.V.^1 ; Tarasov, I.S.^1 | |
| Ioffe Institute, St.-Petersburg | |
| 194021, Russia^1 | |
| 关键词: Development and applications; High-order; Key elements; Optical output power; Postgrowth process; Slope efficiencies; Spatial parameters; Spectral widths; | |
| Others : https://iopscience.iop.org/article/10.1088/1742-6596/740/1/012003/pdf DOI : 10.1088/1742-6596/740/1/012003 |
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| 来源: IOP | |
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【 摘 要 】
Control of spectral and spatial parameters of semiconductor lasers is a key element of their development and application. Surface integrated high-order distributed Bragg reflector (DBR) is the way to narrow diode laser spectrum preserving the conventional postgrowth process of laser diodes. On the other hand, high-order DBR has specific optical losses, which reduce optical output power. In this work we analyzed these specific optical losses and present design of laser resonator containing short front DBR, that allow to significantly reduce losses. With this approach, slope efficiency was greatly increased in contrast with conventional rear DBR laser diodes and 4 W optical output power with spectral width of less than 3 A was attained.
【 预 览 】
| Files | Size | Format | View |
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| Diode lasers with front surface high-order distributed Bragg reflector | 1077KB |
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