Consideration of the condensation processes of thin films in the crystal substrate's potential field

23rd International Conference on Vacuum Technique and Technology

Tupik, V.A.^1 ; Margolin, V.I.^1 ; Su, Chu Trong^1

Department of Radio Microelectronics and Radio Equipment Technology, Electrotechnical University LETI, Saint Petersburg

197376, Russia^1

关键词: Computer modeling;    Condensation process;    Crystal substrates;    Fractal analysis;    Ideal crystals;    Potential barriers;    Potential field;    Single particle;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/729/1/012025/pdf
DOI  :  10.1088/1742-6596/729/1/012025

来源: IOP

【 摘 要 】

The condensation process of a single particle in an ideal crystal substrate's potential field is considered. The optimal deposition path and the potential barrier of deposited particle's motion are shown. Some computer modeling examples of thin film's growth process were carried out on the basis of the implemented programs. A fractal analysis of obtained thin films was made, on the basis of which the possibility of estimating the performance of thin film's growth process will be discussed.