Formation of deep mesa-structures on SiC using fluoride plasma

23rd International Conference on Vacuum Technique and Technology

Afanasiev, A.V.^1 ; Ilyin, V.A.^1 ; Romanov, A.A.^1 ; Serkov, A.V.^1 ; Chigirev, D.A.^1

St. Petersburg Electrotechnical University, LETI, Professora Popova str. 5, St. Petersburg

197376, Russia^1

关键词: Industrial equipment;    Ion plasma etching;    Mesa structure;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/729/1/012008/pdf
DOI  :  10.1088/1742-6596/729/1/012008

来源: IOP

【 摘 要 】

A process of deep profiles formation on silicon carbide using ion-plasma etching in fluoride plasma is discussed. An industrial equipment «Caroline PE 15» (Russia) with ICP plasma source was used in experiments. The obtained experimental samples are perspective in power electronics applications.