The effect of the sulfide passivation on the luminescence of microdisk mesas with quantum wells and quantum dots

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Kryzhanovskaya, N.V.^1 ; Lebedev, M.V.^2 ; Lvova, T.V.^2 ; Kudashova, Yu.V.^1 ; Shostak, I.I.^1 ; Moiseev, E.I.^1 ; Zhukov, A.E.^1,3 ; Maximov, M.V.^1,2 ; Kulagina, M.M.^2 ; Nadtochiy, A.M.^1 ; Troshkov, S.I.^2

St Petersburg Academic University, 8/3 Khlopina st., St Petersburg

194021, Russia^1

Ioffe Institute, 26 Polytekhnicheskaya, St.Petersburg

194021, Russia^2

St Petersburg Scientific Center of RAS, 5 Universitetskaya Nab., St Petersburg

199034, Russia^3

关键词: Active regions;    Gaas/alas;    Mesa structure;    Microdisks;    Photoluminescence intensities;    Sulfide passivations;    Surface recombination velocities;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012043/pdf
DOI  :  10.1088/1742-6596/643/1/012043

来源: IOP

【 摘 要 】

Sulphide passivation was used for reducing the surface recombination velocity of microdisk mesas based on (AlGaIn)As/GaAs heterostructures with active region formed either by ten GaAs/AlAs quantum wells or by 1 layer of InAs/In0.15Ga0.85As quantum dots. It was demonstrated that the sulfide passivation results in substantial increase of photoluminescence intensity in all types of the mesa-structures studied.