Simulation of the EXAFS and Raman spectra of InxGa1-xN utilizing the equation of motion routine of FEFF8.

16th International Conference on X-ray Absorption Fine Structure

Katsikini, M.^1 ; Pinakidou, F.^1 ; Paloura, E.C.^1 ; Arvanitidis, J.^1 ; Ves, S.^1 ; Reinholz, U.^2 ; Papadomanolaki, E.^3 ; Iliopoulos, E.^3

Aristotle University of Thessaloniki, School of Physics, Thessaloniki

54124, Greece^1

BAM Federal Institute for Materials Research and Testing, Berlin

12200, Germany^2

University of Crete, Department of Physics, IESL-FORTH, Heraklion-Crete

70013, Greece^3

关键词: Combined analysis;    Debye Waller factor;    Equation of motion;    Nearest neighbor distance;    Theoretical simulation;    Vibrational components;    Vibrational density of state;    Virtual crystal approximation;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/712/1/012126/pdf
DOI  :  10.1088/1742-6596/712/1/012126

来源: IOP

【 摘 要 】

A combined analysis of EXAFS and Raman spectra is applied for the study of InxGa1-xN alloys with 0.3stand 2ndshell deviate from the values predicted by the law of Vegard and the virtual crystal approximation. The static disorder in the first nearest neighboring shell (In-N and Ga-N) is null whereas in the cation-cation neighboring shells the static component is generally smaller than the vibrational.