XAFS study on the temperature-dependent occupation sites of Co codopants in (Co, Cu)-codoped ZnO films

16th International Conference on X-ray Absorption Fine Structure

Hu, Fengchun^1 ; Zhang, Shibao^1 ; Pan, Zhiyun^1 ; Yan, Wensheng^1 ; Liu, Qinghua^1 ; Yao, Tao^1 ; Wei, Shiqiang^1

National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui

230029, China^1

关键词: Co-doped ZnO;    Cu-doped ZnO;    Deposition temperatures;    Dilute magnetic semiconductors;    Local structure;    Preferential orientation;    Structural and electronic properties;    Temperature dependent;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/712/1/012107/pdf
DOI  :  10.1088/1742-6596/712/1/012107

来源: IOP

【 摘 要 】

Elemental codoping has been an effective way to regulate the structural and electronic properties of semiconductors. By using x-ray diffraction and x-ray absorption fine structure spectroscopy, we investigate the local structure and spatial occupations of Co dopants in Cu-doped ZnO thin films prepared by pulsed-laser deposition method. It is revealed that the Co dopants are substantially incorporated into ZnO matrix when the deposition temperature is increased up to 650 °C, although the preferential orientation of ZnO film is changed. The results provide experimental guidance in the synthesis of the co-doped ZnO based dilute magnetic semiconductors.