Effect of Homo-buffer Layers on the Properties of Sputtering Deposited Ga2O3 Films

International Conference on Smart Engineering Materials 2018

Huang, Jian^1 ; Li, Bing^1 ; Ma, Yuncheng^1 ; Tang, Ke^1 ; Huang, Haofei^1 ; Hu, Yan^1 ; Zou, Tianyu^1 ; Wang, Linjun^1

School of Materials Science and Engineering, Shanghai University, No. 333 Nanchen Road, Shanghai

200444, China^1

关键词: Annealing treatments;    Co-doped ZnO;    Crystalline quality;    Homo-buffer layers;    Inter-digitated electrodes;    Photoresponses;    Radio frequency magnetron sputtering method;    UV photodetectors;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/362/1/012003/pdf
DOI  :  10.1088/1757-899X/362/1/012003

来源: IOP

【 摘 要 】

β- Ga2O3 films were grown by radio-frequency magnetron sputtering method. The influence of Ga2O3 buffer layers and annealing treatment on the structural, optical, morphological and electrical properties of Ga2O3 films was studied. The results revealed an improvement of crystalline quality and transmittance of annealed β- Ga2O3 films prepared with homo-buffer layers. Ga2O3 film UV photodetectors were fabricated with a new B and Ga co-doped ZnO films (BGZO)/Au interdigitated electrode. A good ohmic contact was formed between the film and the electrode. For the detector based on Ga2O3 films with buffer layers, a higher value of photo response and faster response times was obtained.