Temperature dependent electrical characteristics of Zn/ZnSe/n-GaAs/In structure

International Physics Conference at the Anatolian Peak 2016

Salam, M.^1 ; Güzeldir, B.^1

Department of Physics, Faculty of Science, Atatürk University, Erzurum

25240, Turkey^1

关键词: Electrical characteristic;    Electrical parameter;    Increasing temperatures;    Sample temperature;    Series resistances;    Successive ionic layer adsorption and reactions;    Temperature dependent;    Wide temperature ranges;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/707/1/012025/pdf
DOI  :  10.1088/1742-6596/707/1/012025

来源: IOP

【 摘 要 】

We have reported a study of the I-V characteristics of Zn/ZnSe/n-GaAs/In sandwich structure in a wide temperature range of 80-300 K by a step of 20 K, which are prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) method. The main electrical parameters, such as ideality factor and zero-bias barrier height determined from the forward bias I-V characteristics were found strongly depend on temperature and when the increased, the n decreased with increasing temperature. The ideality factor and barrier height values as a function of the sample temperature have been attributed to the presence of the lateral inhomogeneities of the barrier height. Furthermore, the series resistance have been calculated from the I-V measurements as a function of temperature dependent.