Structural modification of Ga+ and N+ ion implanted ta-C films

19th International Summer School on Vacuum, Electron and Ion Technologies

Berova, M.^1 ; Sandulov, M.^1 ; Tsvetkova, T.^1 ; Karashanova, D.^2 ; Boettger, R.^3 ; Bischoff, L.^3

Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, Sofia

1784, Bulgaria^1

Acad. J. Malinovski Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, Acad. G. Bontchev Str., Bl. 109, Sofia

1113, Bulgaria^2

Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, POB 510119, Dresden

01314, Germany^3

关键词: Filtered cathodic vacuum arc;    Implanted materials;    Ion energies;    Ion fluences;    Ion implanted;    Nonequilibrium conditions;    Structural modifications;    Tetrahedral amorphous carbon (ta-C);   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/700/1/012035/pdf
DOI  :  10.1088/1742-6596/700/1/012035

来源: IOP

【 摘 要 】

Thin-film samples (d-40 nm) of tetrahedral amorphous carbon (ta-C) deposited by filtered cathodic vacuum arc (FCVA) were implanted with Ga+at ion energy E = 20 keV and ion fluences D = 3 × 1014÷3 × 1015cm2and N+ with the same energy and a dose D = 3 × 1014cm-2. The Ga+ion beam induced a structural modification of the implanted material. This resulted in a considerable change of its structural properties, manifested as the formation of a new phase under non-equilibrium conditions, which could be accompanied by considerable changes in the ta-C films optical properties. The N+implantation also resulted in a modification of the surface structure. These effects were explored using transmission (TEM) and scanning (SEM) electron microscopy.