Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity

17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Lebedev, D.V.^1 ; Mintairov, A.M.^1,2 ; Kulagina, M.M.^1 ; Troshkov, S.I.^1 ; Kapaldo, J.^2 ; Merz, J.L.^2 ; Rouvimov, S.^2 ; Juska, G.^3 ; Gocalinska, A.^3 ; Moroni, S.T.^3 ; Pelucchi, E.^3

Ioffe Institute, 26 Polytechnicheskaya st, St. Petersburg

194021, Russia^1

University of Notre Dame, EE Department, Notre Dame

IN 46556, United States^2

Tyndall National Institute, University College Cork, Dyke Parade, Cork, Ireland^3

关键词: Active elements;    Coupling factor;    Laser generation;    Lasing operation;    Low temperatures;    Microdisk cavities;    Quality factor Q;    Threshold power density;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/690/1/012023/pdf
DOI  :  10.1088/1742-6596/690/1/012023

来源: IOP

【 摘 要 】

AlInAs microdisk cavities having quality factor Q ∼ 15 000 were fabricated from lattice-matched InP/AlInAs (interface/aggregation) quantum dot (QD) structures using wet chemical etching. The QD emission coupled to whispering gallery modes was observed at spectral range 920 - 1000 nm at temperatures of 10 - 160 K. The laser generation with threshold power density of 50 W/cm2at T = 10 K was observed under optical pumping. It was found that the spontaneous emission coupling factor β equals 0.23 for these microdisks. The low temperature lasing operation and the small coupling factors observed suggest the existence of small QDs formed at the InP/InAlAs interface as the main active elements.