Ge clusters and wetting layers forming from granular films on the Si(001) surface

17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Storozhevykh, M.S.^1 ; Arapkina, L.V.^1 ; Yuryev, V.A.^1

A. M. Prokhorov General Physics Institute, Russian Academy of Sciences, 38 Vavilov Street, Moscow

119991, Russia^1

关键词: Closed systems;    Granular film;    Large clusters;    Number density;    Rapid-heating;    Si(001) surfaces;    Total density;    Wetting layer;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/690/1/012013/pdf
DOI  :  10.1088/1742-6596/690/1/012013

来源: IOP

【 摘 要 】

The report studies the transformation of a Ge granular film deposited on the Si(001) surface at room temperature into a Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600 °C. As a result of the short-term annealing at 600 °C in conditions of a closed system, the Ge granular film transforms into a usual wetting layer and Ge clusters with multimodal size distribution and Ge oval drops having the highest number density. After the long-term thermal treatment of the Ge film at the same temperature, Ge drops disappear; the large clusters increase their sizes at the expense of the smaller ones. The total density of Ge clusters on the surface drastically decreases. The wetting layer mixed c(4 x 2) + p(2 x 2) reconstruction transforms into a single c(4 x 2) one which is likely to be thermodynamically favoured. Pyramids or domes are not observed on the surface after any annealing.