Donor-assisted resonant electron tunneling in double-barrier heterostructures under tilted magnetic fields: A theoretical study

3rd International Meeting for Researchers in Materials and Plasma Technology; 1st Symposium on Nanoscience and Nanotechnology

物理学;材料科学

Paredes, H.^1 ; Ríos, C.L. Beltrán^1 ; Arce, J.C.^2

Universidad Industrial de Santander, Bucaramanga, Colombia^1

Universidad Del Valle, Cali, Colombia^2

关键词: Double barrier heterostructure;    Growth directions;    Nonequilibrium formalism;    Parent materials;    Simple-cubic lattices;    Theoretical study;    Tight-binding Hamiltonians;    Tilted magnetic fields;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/687/1/012079/pdf
DOI  :  10.1088/1742-6596/687/1/012079

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

A theoretical study of the current-voltage characteristics of a double-barrier heterostructure doped with a layer of shallow donors in the middle of the well and subjected to a magnetic field tilted with respect to the growth direction is reported. The parent materials are assumed to possess simple cubic lattices, the electronic structure of the system is modeled by means of a one-band tight-binding Hamiltonian, and the current is evaluated employing the Keldysh nonequilibrium formalism. The results reveal the magnetocompression of the donor wavefunction, in good qualitative agreement with the experimental report of Patanéet al [Phys Rev Lett 105 236804 (2010)].