Electron g-factor in GaAs/AlGaAs quantum wells of different width and barrier Al concentrations

20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics

Shchepetilnikov, A.V.^1,2 ; Nefyodov, Yu.A.^1 ; Kukushkin, I.V.^1 ; Dietsche, W.^3

Institute of Solid State Physics RAS, 142432 Chernogolovka, Moscow district, Russia^1

Moscow Institute of Physics and Technology, Dolgoprudny, Moscow district, 141700, Russia^2

Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 70569 Stuttgart, Germany^3

关键词: Al-concentration;    Electron g-factor;    Electron spin resonance techniques;    GaAs/AlGaAs quantum well;    Growth directions;    Narrow quantum wells;    Tensor components;    Three component;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/456/1/012035/pdf
DOI  :  10.1088/1742-6596/456/1/012035

来源: IOP

【 摘 要 】

Using electrically detected electron spin resonance technique, three components of electron g-factor tensor are studied in a number of asymmetrically doped GaAs/AlGaAs quantum wells grown in the [001] direction. The investigated quantum wells are characterized by different well widths and barrier Al concentrations. The dependence of gzzcomponent along the growth direction on the heterostructure band gap was shown to be universal. The band gap was measured with the aid of photoluminescence. The two-fold in-plane g-factor anisotropy with the [110] and [10] principal axes turned out to vanish in narrow quantum wells. Three nonzero components of aˆ tensor of the linear in the magnetic field corrections to the g-factor are measured for a number of wells of different parameters. The aˆ tensor components are strongly dependent on the well width.