Analysis of the influence of the applied voltage and the scan speed in the atomic force microscopy local oxidation technique

3rd International Meeting for Researchers in Materials and Plasma Technology; 1st Symposium on Nanoscience and Nanotechnology

物理学;材料科学

Mendoza, C.^1,2 ; Plata, A.^1 ; Lizarazo, Z.^1 ; Chacón, C.A.^1,2

Universidad Industrial de Santander, Bucaramanga, Colombia^1

Laboratorio de Microscopia, Parque Tecnológico Guatiguará, Piedecuesta, Colombia^2

关键词: Applied voltages;    Contact modes;    Fabrication process;    Local oxidation;    Nanoscale patterning;    Scanning speed;    Silicon substrates;    Writing speed;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/687/1/012039/pdf
DOI  :  10.1088/1742-6596/687/1/012039

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

The local nanolithography oxidation technique is implemented by using an atomic force microscope (AFM) for the fabrication of nanoscale patterning structures on a silicon substrate covered whit a thin film of silicon nitride. During the fabrication process, the microscope is operated on air and contact mode utilizing a silicon tip covered whit a hard Cobalt- Chromium coat. The dependence of the oxide growth with the applied voltage was investigated varying this parameter in a range of 1 to 10V to constant scanning speed; the influence of the writing speed in the dimensions of the oxide formed is also analysed varying the speed values between 0.1 to 1μm/s. Is found that the dimensions of lines depend of scanning speed and voltages applied.