The read-out ASIC for silicon drift detectors

International Conference on Particle Physics and Astrophysics

Atkin, E.^1 ; Ivanov, P.^1 ; Krivchenko, A.^1 ; Levin, V.^2 ; Gusev, A.^1 ; Malankin, E.^1 ; Normanov, D.^1 ; Rotin, A.^2 ; Sagdiev, I.^1 ; Shumikhin, V.^1

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe highway 31, Moscow

115409, Russia^1

Space Research Institute, Russian Academy of Sciences, Profsoyuznayas str 84/32, Moscow

117997, Russia^2

关键词: Detector structure;    Drift detectors;    Silicon Drift Detector;    Time constants;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/675/4/042031/pdf
DOI  :  10.1088/1742-6596/675/4/042031

来源: IOP

【 摘 要 】

The paper describes the read-out ASIC for silicon X-ray drift detectors. The ASIC has been designed in CMOS 0.35 μm technology and contains two read-out channels. Each channel includes a preamplifier and shaper. The preamplifier in the first channel has a built-in input transistor, the preamplifier in second channel works with an external JFET, which is built in the detector structure. Preamplifiers have been optimized for operation with detectors with capacitances of 100 fF. The 6-th order shaper has controllable time constants (0.5 - 8 μs).