Selectivity control of photosensitivity of Ag-GaP and Ag- AlGaN structures

17th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Lamkin, I.A.^1 ; Tarasov, S.A.^1 ; Solomonov, A.V.^1 ; Andreev, M.Y.^1 ; Kurin, S.Yu.^2

Saint-Petersburg Electrotechnical University LETI, Prof. Popova 5, St. Petersburg

197376, Russia^1

GaN-Crystals Ltd., 27 Engels Ave, St. Petersburg

194156, Russia^2

关键词: Half-width;    Metal layer;    Selectivity control;    Sensitivity spectrum;    Short wavelengths;    Solid solution composition;    Visible blind;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/661/1/012040/pdf
DOI  :  10.1088/1742-6596/661/1/012040

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

Design, growth and studies of photosensitive structures based on Ag-GaP and Ag- AlxGa1-xN contacts are reported. Methods for structure selectivity control, which allow changing the sensitivity spectrum half-width in a range of 11-210 nm were worked out. By varying the metal layer thickness, a set of Ag-GaP short-wavelength photodetectors (PD) was fabricated. The set includes PDs from broadband (spectrum half-width Δλ=210 nm, sensitivity SI= 0,19 A/W) to visible-blind (Δλ=15 nm, SI= 0,034 A/W). The use of Ag-AlxGa1-xN structures provided increased sensitivity (SI= 0,071 A/W) and Δλ reduced to 11 nm due to special selection of solid solution composition.