Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

12th International Conference on Gas Discharge Plasmas and Their Applications

Tarala, V.A.^1 ; Altakhov, A.S.^1 ; Martens, V. Ya^1 ; Lisitsyn, S.V.^1

North-Caucasus Federal University, 2 Kulakov Ave., Stavropol

355029, Russia^1

关键词: Aluminum nitride films;    Crystalline aluminum;    Low temperatures;    Plasma exposure;    Plasma exposure step;    Plasma-enhanced atomic layer deposition;    Temperature drops;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/652/1/012034/pdf
DOI  :  10.1088/1742-6596/652/1/012034

来源: IOP

【 摘 要 】

Aluminum nitride films have been grown by Plasma-Enhanced Atomic Layer Deposition method. It was found that at temperatures of 250°C and 280°C increase of the plasma exposure step duration over 6 s, as well as increase of reactor purge step duration over 1 s does not affect the growth rate, however, it affects the microstructure of the films. It was found that crystalline aluminum nitride films deposit with plasma exposure duration over 10 s and the reactor purging over 10 s. When the temperature drops the increase of reactor purge step duration and plasma exposure step duration over 20 s is required for crystalline AlN film growth.