Monte Carlo Study on Anomalous Carrier Diffusion in Inhomogeneous Semiconductors

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Mori, N.^1 ; Hill, R.J.A.^2 ; Patané, A.^2 ; Eaves, L.^2

Division of Electrical, Electronic and Information Engineering, Osaka University, Osaka

565-0871, Japan^1

School of Physics and Astronomy, University of Nottingham, Nottingham

NG7 2RD, United Kingdom^2

关键词: Anomalous diffusion;    Carrier diffusions;    Electron diffusion;    Ensemble monte carlo;    Generalized random walks;    High mobility;    Time domain;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012059/pdf
DOI  :  10.1088/1742-6596/647/1/012059

来源: IOP

【 摘 要 】

We perform ensemble Monte Carlo simulations of electron diffusion in high mobility inhomogeneous InAs layers. Electrons move ballistically for short times while moving diffusively for sufficiently long times. We find that electrons show anomalous diffusion in the intermediate time domain. Our study suggests that electrons in inhomogeneous InAs could be used to experimentally explore generalized random walk phenomena, which, some studies assert, also occur naturally in the motion of animal foraging paths.