Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Rodriguez-Fernandez, A.^1 ; Íñiguez-De-La-Torre, I.^1 ; García-Pérez, Ó.^1 ; García, S.^1 ; Westlund, A.^2 ; Nilsson, P.-Å.^2 ; Grahn, J.^2 ; González, T.^1 ; Mateos, J.^1 ; Pérez, S.^1

Applied Physics Department, Salamanca University, Salamanca

37008, Spain^1

Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg

SE-412 96, Sweden^2

关键词: Effects of temperature;    Emission parameters;    Ensemble monte carlo;    Experimental evidence;    InGaAs diode;    Slot diode;    Surface trap;    THz emission;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012039/pdf
DOI  :  10.1088/1742-6596/647/1/012039

来源: IOP

【 摘 要 】

Monte Carlo simulations forecast Gunn-like oscillations at ∼0.75-1.25 THz in InGaAs planar recessed diodes (slot diodes); however, up to date no experimental evidence of this effect has been observed. The effects of temperature and surface charges on the emission parameters from InGaAs diodes are analyzed by means of an ensemble Monte Carlo simulator. Cooling the device down to 77 K strongly improves the amplitude of the oscillations and can increase their frequency. On the other hand, the ratio between cap and recess charges plays an important role for the onset of oscillations. A high level of traps in the recess region may completely attenuate the emission.