Hydrodynamic Model for Silicon Carbide Semiconductors including crystal heating

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Muscato, O.^1 ; Di Stefano, V.^1

Dipartimento di Matematica e Informatica, Universitá Degli Studi di Catania, Viale A. Doria 6, Catania

95125, Italy^1

关键词: Crystal heating;    Electron transport;    Electrons and phonons;    Hydrodynamic model;    Maximum entropy principle;    Silicon carbide semiconductors;    Transport coefficient;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012052/pdf
DOI  :  10.1088/1742-6596/647/1/012052

来源: IOP

【 摘 要 】

A hydrodynamic model describing the electron transport in silicon carbide semiconductors, coupled with the heating of the crystal lattice is presented. It has been obtained by taking the moments of the coupled Boltzmann equations for the electrons and phonons, and by using the Maximum Entropy Principle in order to determine the transport coefficients and the constitutive equations. Simulation results in the bulk case are shown.