Steady-state and high-frequency electron transport in GaN nanowires

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Korotyeyev, V.V.^1 ; Kochelap, V.A.^1 ; Vitusevich, S.^2 ; Sydoruk, V.^2 ; Varani, L.^3

Department of Theoretical Physics, Institute of Semiconductor Physics, Kyiv

03028, Ukraine^1

Peter Grunberg Institute, Forschungszentrum Julich, Germany^2

Institut d'Electronique du Sud, CNRS UMR 5214, University Montpellier 2, France^3

关键词: AlGaN/GaN heterostructures;    Electric characteristics;    Electron concentration;    Electrostatic potentials;    High-frequency properties;    Non-linear current-voltage characteristics;    Space-charge limited;    Theoretical research;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012033/pdf
DOI  :  10.1088/1742-6596/647/1/012033

来源: IOP

【 摘 要 】

The results of experimental and theoretical researches of steady-state and high-frequency electric characteristics of planar AlGaN/GaN heterostructure nanowires are presented. A strong depletion effect associated with electron trapping on the edge states is observed for narrow nanowires with widths ∼ 200 - 400 nm. The spatial distributions of the electron concentration and electrostatic potential are calculated. At small applied voltages (2 - 10 V) for nanowires of length equal to 600 μm we found non-linear current-voltage characteristics related to a space-charge limited transport regime. We found that for narrow wires transversal transport is essentially ballistic: this dramatically modifies the high-frequency properties of the electron gas, in particularly, leading to a resonant absorption of THz radiation.