Energy transfers in telecommunication-band region of (Sc,Er)2O3 thin films grown on Si(111)

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Adachi, S.^1 ; Kawakami, Y.^1 ; Kaji, R.^1 ; Tawara, T.^2,3 ; Omi, H.^2,3

Department of Applied Physics, Hokkaido University, Sapporo

060-8628, Japan^1

NTT Basic Research Laboratories, NTT Corporation, Kanagawa, Atsugi

243-0198, Japan^2

NTT Nanophotonics Center, NTT Corporation, Kanagawa, Atsugi

243-0198, Japan^3

关键词: Crystal-field levels;    Energy transfer dynamics;    Epitaxial thin films;    Non-radiative relaxation;    Telecommunication bands;    Temperature dependence;    Temperature sensitive;    Time-resolved photoluminescence;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012031/pdf
DOI  :  10.1088/1742-6596/647/1/012031

来源: IOP

【 摘 要 】

The energy transfer dynamics in 1.5-μm region of (ErxSc1-x)2O3epitaxial thin films grown on Si(111) were investigated via temperature-dependence of the time-resolved photoluminescence (TR-PL). In order to exclude the dissipation via the cooperative up- conversion, the low power and resonant excitation of the third crystal-field level (4I13/2: Y'3) of the Er3+site with C3isymmetry was employed. The TR-PL measurements of the Y'1- Z'1transition have proved the existence of two decay components having fast (10-100 μs) and slow (0.1-1 ms) relaxation times in the range of 4-60 K. The model calculation including the temperature-sensitive and -insensitive non-radiative relaxations could explain well all the observed results. Moreover, the long averaged inter-Er-ion distance by decreasing Er density was found to be very effective to reduce both non-radiative relaxation rates.