Controlling plasmonic properties of epitaxial thin films of indium tin oxide in the near-infrared region

6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications 2014

Kamakura, R.^1 ; Fujita, K.^1 ; Murai, S.^1 ; Tanaka, K.^1

Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto

615-8510, Japan^1

关键词: Dielectric functions;    Epitaxial thin films;    Excitation wavelength;    Kretschmann geometry;    Near infrared region;    Plasmonic properties;    Reflectance spectroscopy;    Surface plasmon polaritions;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/619/1/012056/pdf
DOI  :  10.1088/1742-6596/619/1/012056

来源: IOP

【 摘 要 】

Epitaxial thin films of indium tin oxide (ITO) were grown on yttria-stabilized zirconia single-crystal substrates by using a pulsed laser deposition to examine their plasmonic properties. The dielectric function of ITO was characterized by spectroscopic ellipsometry. Through the concentration of SnO2in the target, the carrier concentration in the films was modified, which directly leads to the tuning of the dielectric function in the near-infrared region. Variable-angle reflectance spectroscopy in the Kretschmann geometry shows the dip in the reflection spectrum of p-polarized light corresponding to the excitation of surface plasmon polaritions (SPPs) in the near-infrared region. The excitation wavelength of the SPPs was shifted with changing the dielectric functions of ITO, which is reproduced by the calculation using transfer matrix method.