Electron capture processes in quantum dots due to one-and two-phonon assisted transitions: The role of optical phonon confinement

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Vartanian, A.L.^1 ; Vardanyan, K.A.^1 ; Mughnetsyan, V.N.^1 ; Kirakosyan, A.A.^1

Department of Solid State Physics, Yerevan State University, A.Manoogian, Yerevan

0025, Armenia^1

关键词: Analytic expressions;    Electron-capture process;    Lattice temperatures;    Phonon assisted transition;    Phonon confinement;    Polar optical phonons;    Practical calculation;    Spherical quantum dot;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012017/pdf
DOI  :  10.1088/1742-6596/647/1/012017

来源: IOP

【 摘 要 】

Electron capture induced by carrier heating in spherical quantum dot-quantum well (QD-QW) structure is studied theoretically. The capture rate (CR) in one- and two-polar- optical-phonon-mediated capture processes has been studied by taking into account the phonon confinement. We have derived the analytic expressions for carrier CRs which can be conveniently applied to practical calculations for the spherical quantum dot systems. The numerical results of the CR as function of dot radius, lattice temperature and electron density in GaAs/AlAs/vacuum and CdSe/ZnS/H2O QD systems are obtained and discussed.