High-field electron transport in GaN under crossed electric and magnetic fields

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Kochelap, V.A.^1 ; Korotyeyev, V.V.^1 ; Syngayivska, G.I.^1 ; Varani, L.^2

Department of Theoretical Physics, Institute of Semiconductor Physics, Kyiv

03028, Ukraine^1

Institut d'Electronique du Sud, CNRS UMR 5214, University Montpellier 2, France^2

关键词: Crossed electric and magnetic fields;    Dissipative component;    Electron transport;    Lattice temperatures;    Magnetic and electric fields;    Monotonic behavior;    Non-equilibrium electrons;    Topological structure;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012050/pdf
DOI  :  10.1088/1742-6596/647/1/012050

来源: IOP

【 摘 要 】

High-field electron transport studied in crossed electric and magnetic fields in bulk GaN with doping of 1016cm-3, compensation around 90% at the low lattice temperature (30 K). It was found the range of the magnetic and electric fields where the non-equilibrium electron distribution function has a complicated topological structure in the momentum space with a tendency to the formation of the inversion population. Field dependences of dissipative and Hall components of the drift velocity were calculated for the samples with short- and open- circuited Hall contacts in wide ranges of applied electric (0 - 20 kV/cm) and magnetic (1 - 10 T) fields. For former sample, field dependences of dissipative and Hall components of the drift velocity have a non-monotonic behavior. The dissipative component has the inflection point which corresponds to the maximum point of the Hall component. For latter sample, the drift velocity demonstrate a usual sub-linear growth without any critical points. We found that GaN samples with controlled resistance of the Hall circuit can be utilized as a electronic high-power switch.