Investigation of possibility of VLWIR lasing in HgCdTe based heterostructures

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Morozov, S.V.^1,2 ; Rumyantsev, V.V.^1,2 ; Kadykov, A.M.^1,3 ; Dubinov, A.A.^1,2 ; Antonov, A.V.^1,2 ; Kudryavtsev, K.E.^1,2 ; Kuritsin, D.I.^1,2 ; Mikhailov, N.N.^4,5 ; Dvoretskii, S.A.^4 ; Teppe, F.^3 ; Gavrilenko, V.I.^1,2

Institute for Physics of Microstructures of Russian Academy of Sciences, Nizhny Novgorod

603950, Russia^1

Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod

603950, Russia^2

UMR CNRS 5221, GIS-TERALAB, Universite Montpellier II, Montpellier

34095, France^3

A.V.Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

630090, Russia^4

Novosibirsk State University, Novosibirsk

630090, Russia^5

关键词: Experimental evidence;    Hg1-xCdxTe;    Long wave infrared;    Long wavelength;    Narrow gap;    Radiation wavelength;    Superluminescence;    Very-long-wave infrared;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012008/pdf
DOI  :  10.1088/1742-6596/647/1/012008

来源: IOP

【 摘 要 】

The optical properties of a number of Hg1-xCdxTe bulk epilayers (x = 0.152 - 0.23) and heterostructures with quantum wells (QW) based on narrow gap HgCdTe are examined aiming to reveal the prospects of such structures for laser development in long wave infrared and very long wave infrared ranges. Experimental evidence of long wavelength superluminescence, i.e. amplification of spontaneous emission, at 8.4 μm in narrow gap HgCdTe bulk epitaxial film at 100 K is reported. Employing heterostructures with QW is demonstrated to be promissory for furthering the radiation wavelength to 10 - 30 μm range.