Application of GaN for photoelectrolysis of water

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Puzyk, M.V.^1 ; Usikov, A.S.^2,3 ; Kurin, S.Yu.^4 ; Puzyk, A.M.^1 ; Fomichev, A.D.^2 ; Ermakov, I.A.^2 ; Kovalev, D.S.^2 ; Papchenko, B.P.^2 ; Helava, H.^3 ; Makarov, Yu.N.^3,4

Herzen University, Nab. r. Moyki 48, St. Petersburg

194186, Russia^1

University ITMO, Kronverkskiy pr. 49, St. Petersburg

197101, Russia^2

Nitride Crystals Inc., 181 E Industry Court, Deer Park

NY

11729, United States^3

Nitride Crystals Group, Ltd., pr. Engel'sa 27, St. Petersburg

194156, Russia^4

关键词: Hydrogen gas generation;    Hydrogen production rate;    P type conductivity;    Photoelectrolysis;    Sapphire substrates;    Water electrolysis;    Water splitting;    Working electrode;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012127/pdf
DOI  :  10.1088/1742-6596/643/1/012127

来源: IOP

【 摘 要 】

GaN layers of n-type and p-type conductivity grown by HVPE on sapphire substrates were used as working electrodes for water electrolysis, photoelectrolysis and hydrogen gas generation. Specifically the water splitting process is discussed. Corrosion of the GaN materials is also considered. The hydrogen production rate under 365-nm UV LED irradiation of the GaN and external bias was 0.3 ml/(cm2∗h) for an n-GaN photoanode (n∼8×1016cm-3) in 1M Na2SO4electrolyte and 1.2 ml/(cm2∗h) for an n-GaN photoanode (n∼1×1017cm-3) in 1M KOH electrolyte.