Charge transport in gap structures based on amorphous Al2O3

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Borisova, T.M.^1 ; Castro, R.A.^1 ; Khanin, S.D.^1

Department of Physical Electronics, Herzen State Pedagogical University of Russia, Moika Emb., Saint-Petersburg

191186, Russia^1

关键词: Amorphous layer;    Dispersion parameters;    Gap structures;    Hopping conduction;    Temperature range;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012112/pdf
DOI  :  10.1088/1742-6596/643/1/012112

来源: IOP

【 摘 要 】

The charge transport in amorphous layers of oxide of aluminum Al2O3in the temperature range T=223-273K is studied. It was found the existence of hopping conduction mechanism in studied layers. The values of dispersion parameter s and activation energy EAare determined.