Room-temperature direct bonding of diamond and Al

SCRIPTA MATERIALIA

卷:159

Article

Liang, Jianbo¹  Yamajo, Shoji¹  Kuball, Martin²  Shigekawa, Naoteru¹ 

[1] Osaka City Univ, Elect Informat Syst, Sumiyoshi Ku, 3-3-138 Sugimoto, Osaka 5588585, Japan

[2] Univ Bristol, HH Wills Phys Lab, CDTR, Tyndall Ave, Bristol BS8 1TL, Avon, England

关键词: Diamond/Al direct bonding;    Surface activated bonding;    Bonding interface;    Amorphous layer;   

DOI  :  10.1016/j.scriptamat.2018.09.016

来源: Elsevier

【 摘 要 】

Direct bonding of diamond and Al is achieved by surface activated bonding at room temperature. The interfacial structures of the diamond/Al bonding interface with annealing at different temperatures are investigated under in-situ annealing in a transmission electron microscope (TEM). An amorphous layer with a thickness of 4 +/- 0.5 nm is formed at the bonding interface without annealing, the thickness of the amorphous layer decreases with increasing annealing temperature, the amorphous layer vanished after annealing at 600 degrees C. No structural defects are observed at the bonding interface with annealing at different temperatures. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

【 授权许可】

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