Increasing of AlGaAs/GaAs quantum well robustness to resonant excitation by lowering Al concentration in barriers

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Solovev, I.A.^1 ; Davydov, V.G.^1 ; Kapitonov, Yu.V.^1 ; Shapochkin, P.Yu.^1 ; Efimov, Yu.P.^1 ; Lovcjus, V.A.^1 ; Eliseev, S.A.^1 ; Petrov, V.V.^1 ; Ovsyankin, V.V.^1

St. Petersburg State University, Ulyanovskaya 1, Petrodvorets, St. Petersburg

198504, Russia^1

关键词: Al-concentration;    AlGaAs/GaAs;    Exciton resonances;    Low-intensity;    Resonant excitation;    Resonant illumination;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012085/pdf
DOI  :  10.1088/1742-6596/643/1/012085

来源: IOP

【 摘 要 】

The robustness of AlGaAs/GaAs quantum well to strong resonant excitation is studied. It was found that lowering Al concentration in barriers to 3% does not influence the measured radiative linewidth of exciton resonance in the sample at low intensities. At the same time parasitic broadening of the resonance by an additional resonant illumination is strongly suppressed as compared to the quantum well with 30% of Al in barriers.