Ion-beam synthesis of GaN in silicon

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Sergeev, V.A.^1 ; Korolev, D.S.^1 ; Mikhaylov, A.N.^1 ; Belov, A.I.^1 ; Vasiliev, V.K.^1 ; Smirnov, A.E.^1 ; Nikolitchev, D.E.^1 ; Surodin, S.I.^1 ; Guseinov, D.V.^1 ; Nezhdanov, A.V.^1 ; Markelov, A.S.^1 ; Trushin, V.N.^1 ; Pirogov, A.V.^1 ; Pavlov, D.A.^1 ; Tetelbaum, D.I.^1

Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin prospect, Nizhni Novgorod

603950, Russia^1

关键词: Composite nanostructures;    Ion beam synthesis;    Raman microscopy;    Silicon layer;    Silicon-based materials;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012082/pdf
DOI  :  10.1088/1742-6596/643/1/012082

来源: IOP

【 摘 要 】

The structure and composition of a subsurface silicon layer subjected to a dual implantation of Ga and N ions with subsequent annealing have been investigated using X-ray photoelectron spectroscopy, electron spin resonance, X-ray diffraction, Raman microscopy, transmission electron microscopy. The results indicate a possibility of ion-beam synthesis of GaN composite nanostructures in silicon-based materials.