Improving the efficiency of emission extraction from nitride LED structures with textured interfaces

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Evseenkov, A.S.^1 ; Lamkin, I.A.^1 ; Tarasov, S.A.^1 ; Solomonov, A.V.^1

St. Petersburg Electrotechnical University LETI, 5 Prof. Popova Street, St. Petersburg

197376, Russia^1

关键词: Emission spectrums;    Gallium Nitride (GaN);    Light emitting diode (LED);    Optical power;    Optimal parameter;    Sapphire substrates;    Structure modification;    Surface-texturing;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012033/pdf
DOI  :  10.1088/1742-6596/643/1/012033

来源: IOP

【 摘 要 】

The light-emitting diode (LED) structures based on gallium nitride (GaN) and grown on sapphire substrates were investigated. The obtained experimental data include the emission spectrum, optical power and current-voltage characteristics. Monte Carlo simulation based on the parameters of the structures was conducted. During the simulation optimal parameters of surface texturing were evaluated, and alternative methods of structure modification were shown.