Surface defects formation on strained thin films growing via chemical reaction: a model

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Redkov, A.V.^1,2 ; Kukushkin, S.A.^1,2,3

Institute of Problems of Mechanical Engineering, 8/3 Khlopina str., St.Petersburg

194021, Russia^1

St.Petersburg Academic University, 8/3 Khlopina str., St.Petersburg

194021, Russia^2

ITMO University, Kronverkskiy pr. 49, St.Petersburg

197101, Russia^3

关键词: Defects formation;    Different substrates;    GaN epitaxial films;    Mechanical stress;    Morphological instability;    Multi-component medias;    Multicomponent thin films;    Strained thin films;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012005/pdf
DOI  :  10.1088/1742-6596/643/1/012005

来源: IOP

【 摘 要 】

We investigated in a general way evolution of the elastic flat surface of the crystal during its growth from multicomponent media. The morphological instability caused by mechanical stress has been demonstrated and conditions under which a multicomponent thin film retains its shape have been found. As an example, we have analyzed growth of GaN on different substrates and discussed the impact of III/V ratio on the stability of the GaN epitaxial film growing by HVPE.