Investigation of Influence of Sapphire Crystals Shape Factor on Its Growth by Horizontal Directed Crystallization

7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016;8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2017

Malyukov, S.P.^1 ; Cherednichenko, D.I.^1 ; Klunnikova, Yu V.^1 ; Sayenko, A.V.^1

Southern Federal University, Department of Electronic Apparatuses Design, Nekrasovsky, Taganrog

44, Russia^1

关键词: Closed solutions;    Crystal qualities;    Defects formation;    Different stages;    Directed crystallization;    Related factors;    Sapphire crystal;    Stefan problem;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/475/1/012009/pdf
DOI  :  10.1088/1757-899X/475/1/012009

来源: IOP

【 摘 要 】

The value of shape factor allows to determine what processes (the surface or in crystal volume) define the dynamics of sapphire crystal growth by horizontal directed crystallization method and, as a result, estimate the influence of these processes on crystal quality. We receive the Stefan problem closed solution for sapphire crystals growth by horizontal directed crystallization method. It allows to investigate the growth process and the related factors (thermal stresses on different stages of growth process), melt hydrodynamics and its influence on defects formation. 1.