Novel concepts for designing semiconductor lasers

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Shchukin, V.A.^1,2 ; Ledentsov, N.N.^1,2 ; Maximov, M.V.^2,3 ; Gordeev, N.Yu.^2,3 ; Shernyakov, Yu.M.^2,3 ; Payusov, A.S.^2,3 ; Zhukov, A.E.^2

VI Systems GmbH, Hardenbergstr. 7, Berlin

10623, Germany^1

St Petersburg Academic University, 8/3 Khlopina st., St Petersburg

194021, Russia^2

Ioffe Institute, 26 Polytechnicheskaya, St.Petersburg

194021, Russia^3

关键词: Active waveguides;    Edge emitting semiconductor lasers;    Internal loss;    Novel concept;    Passive waveguides;    Tilted wave lasers;    Vertical direction;    Vertical waveguides;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012001/pdf
DOI  :  10.1088/1742-6596/643/1/012001

来源: IOP

【 摘 要 】

We review novel concepts and demonstrate recent experimental data for edge- emitting semiconductor lasers with broad vertical waveguide. The ultimate case for waveguide extension in the vertical direction can be implemented by using the Tilted Wave Laser (TWL) approach. A TWL is composed of a thin active waveguide (typically 0.3-2 μm) optically coupled to a thick passive waveguide (10-150 μm). A TWL with a 26 μm-thick passive waveguide demonstrated low internal loss of 1.4 cm-1, maximum pulsed power 18 W and maximum CW power 4.7 W. Vertical far field of the TWL consists of two tilted narrow lobs of 2 degrees full width at half maximum each.