Injection current minimization of InAs/InGaAs quantum dot laser by optimization of its active region and reflectivity of laser cavity edges

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Korenev, V.V.^1,3 ; Savelyev, A.V.^1,3 ; Zhukov, A.E.^1,2,3 ; Maximov, M.V.^1,2

Saint-Petersburg Academic University RAS, Saint-Petersburg, 194021, Russia^1

Ioffe Physico-Technical Institute RAS, Saint-Petersburg, 194021, Russia^2

Peter the Great St. Petersburg Polytechnic University, St. Petersburg

195251, Russia^3

关键词: Active regions;    Cavity length;    Edge-reflections;    InAs/InGaAs;    Injection currents;    Internal loss;    Large dispersion;    Lasing spectrum;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012041/pdf
DOI  :  10.1088/1742-6596/643/1/012041

来源: IOP

【 摘 要 】

The ways to optimize key parameters of active region and edge reflectivity of edge- emitting semiconductor quantum dot laser are provided. It is shown that in the case of optimal cavity length and sufficiently large dispersion lasing spectrum of a given width can be obtained at injection current up to an order of magnitude lower in comparison to non-optimized sample. The influence of internal loss and edge reflection is also studied in details.