Effect of laser irradiation on the optical properties of As40Sb15Se45 chalcogenide thin films

6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications 2014

Naik, Ramakanta^1 ; Ganesan, R.^2 ; Sangunni, K.S.^2

Department of Physics, Utkal University, Bhubaneswar

751004, India^1

Department of Physics, Indian Institute of Science, Bangalore

560012, India^2

关键词: Chalcogenide thin films;    Core-level peaks;    Homopolar bonds;    Light exposure;    Photoinduced effects;    Raman shift;    XPS spectra;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/619/1/012042/pdf
DOI  :  10.1088/1742-6596/619/1/012042

来源: IOP

【 摘 要 】

The exposure with band gap light of thermally evaporated As40Sb15Se45amorphous film of 800 nm thickness, were found to be accompanied by optical changes. The as-prepared and illuminated thin films were studied by X-ray diffraction, Fourier Transform Infrared Spectroscopy and X-ray Photoelectron Spectroscopy and Raman spectroscopy. The optical band gap was reduced due to photo induced effects along with the increase in disorder. These optical properties changes are due to the change of homopolar bond densities. The core level peak shifting in XPS spectra and Raman shift supports the optical changes happening in the film due to light exposure.