Growth and scintillation properties of Ce doped Gd2Si2O7/SiO2 eutectics

6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications 2014

Kamada, Kei^1,2 ; Kurosawa, Shunsuke^1,3 ; Murakami, Rikito^3 ; Yokota, Yuui^1 ; Pejchal, Jan^1 ; Ohashi, Yuji^3 ; Yoshikawa, Akira^1,2,3

New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba, Sendai

980-8579, Japan^1

CandA Corporation, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai

980-8579, Japan^2

Institute for Material Reseach, Tohoku University, 2-1-1, Sendai

980-8577, Japan^3

关键词: Ce-doped;    Light yield;    Matrix phase;    PD methods;    Scintillation decay time;    Scintillation properties;    Square shape;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/619/1/012036/pdf
DOI  :  10.1088/1742-6596/619/1/012036

来源: IOP

【 摘 要 】

Ce:Gd2Si2O7/SiO2eutectic was grown by the μ-PD method. The square-shape sample with a side of 5 mm and a length of 15 mm was obtained. Two phases of orthorhombic Gd2Si2O7and SiO2was observed. Rod-phase was SiO2and matrix phase was Gd2Si2O7. Ce3+4f5d emission have been observed at 400nm. The sample showed light yield of around 16,000 photons/MeV. Scintillation decay time was 46.3ns(21%) 249ns(79%).