International Conference on Strongly Correlated Electron Systems 2014 | |
Surface acoustic wave diagnosis of vacancy orbital with electric quadrupoles in silicon | |
Goto, T.^1 ; Mitsumoto, K.^1 ; Akatsu, M.^1 ; Baba, S.^1 ; Okabe, K.^1,3 ; Takasu, R.^1 ; Nemoto, Y.^1 ; Yamada-Kaneta, H.^2 ; Furumura, Y.^4 ; Saito, H.^3 ; Kashima, K.^3 ; Saito, Y.^5 | |
Graduate School of Science and Technology, Niigata | |
950-2181, Japan^1 | |
Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, Kitakyushyu | |
804-8550, Japan^2 | |
GlobalWafers Japan Co., Ltd., Seiro, Niigata | |
957-0197, Japan^3 | |
Philtech Inc., Bunkyo, Tokyo | |
113-0033, Japan^4 | |
Toshiba Corporation, Yokohama | |
225-8522, Japan^5 | |
关键词: Boron-doped silicon; Electric quadrupoles; Interdigital transducer; Low temperatures; Strain interactions; Surface acoustic wave (SAW); Surface acoustic waves; Vacancy concentration; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/592/1/012150/pdf DOI : 10.1088/1742-6596/592/1/012150 |
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来源: IOP | |
【 摘 要 】
We demonstrate ultrasonic diagnosis of vacancies in boron-doped silicon wafers currently used in device manufacturing. The low-temperature softening of elastic constants measured by surface acoustic waves (SAW) as well as bulk ultrasonic waves is caused by a coupling of elastic strains to electric quadrupoles of the vacancy orbital in silicon wafers. Using interdigital transducers with a comb gap of 2.5 μm on a piezoelectric ZnO film deposited on the (001) surface of the wafer, we observed the softening of 1.9×10-4in relative amount of the elastic constant Csbelow 2 K down to 23 mK. Taking account of the strong quadrupole-strain interaction, we deduced a small vacancy concentration 3.1×1012cm-3in the surface layer of the wafer within a penetration depth 3.5 μm of the SAW.
【 预 览 】
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Surface acoustic wave diagnosis of vacancy orbital with electric quadrupoles in silicon | 2012KB | download |