TiN Coatings on Titanium Substrates Using Plasma Assisted Ion Implantation

15th Latin American Workshop on Plasma Physics; 21st IAEA TM on Research Using Small Fusion Devices

Cisternas, M.^1 ; Mellero, F.^1 ; Favre, M.^1,2 ; Bhuyan, H.^1,2 ; Wyndham, E.^1

Instituto de Física, Pontificia Universidad Católica de Chile, Av. Vicuña Mackenna 4860, Santiago, Chile^1

Centro de Investigación en Nanotecnología y Materiales Avanzados (CIEN-UC), Av. Vicuña Mackenna 4860, Santiago, Chile^2

关键词: High voltage pulse;    Implantation process;    Ion species;    Optical emission spectroscopies (OES);    Plasma based ion implantation and deposition;    Radio frequency plasma;    Stationary plasma;    Titanium substrates;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/591/1/012043/pdf
DOI  :  10.1088/1742-6596/591/1/012043

来源: IOP

【 摘 要 】

We present results on producing TiN coatings on titanium substrates, using Plasma-Based Ion Implantation and Deposition (PBII&D). In PBII&D the substrate is immersed into stationary plasma which contains the ion species to be implanted. A negative high voltage pulse is applied to the substrate, which causes the ions in the ion sheath surrounding the substrate to be accelerated across the sheath and implanted into the substrate. We have used a 13.6 MHz, 70 W, radio frequency (RF) plasma, produced with a mixture of 80% N2+ 20% H2, at 200 mTorr, with 4 kV, ≈ 10 μs pulses, at a 0.2 kHz rate. During the implantation process the titanium substrate is heated at 400°C range. The resulting TiN coatings are characterized using atomic force microscopy (AFM), x-ray diffraction (XRD), and Vickers hardness test. Optical emission spectroscopy (OES) is used to identify characteristic RF plasma species.