The use of asymptotic methods for modelling of the carriers wave functions in the Si/SiGe heterostructures with quantum-confined layers

16th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Orlov, A.^1 ; Levashova, N.^1 ; Burbaev, T.^2

Moscow State University, Faculty of Physics, Leninskie Gory 1-2, Moscow

119991, Russia^1

Lebedev Physical Institute, Russian Academy of Sciences, 53 Leninskiy Prospect, Moscow

119991, Russia^2

关键词: Asymptotic method;    Coulomb potential;    Density of distribution;    Electron hole system;    Electrons and holes;    Low dimensional structure;    Nonequilibrium state;    Si/SiGe heterostructures;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/586/1/012003/pdf
DOI  :  10.1088/1742-6596/586/1/012003

来源: IOP

【 摘 要 】

The mathematical model that allows obtaining wave functions of electrons and holes and Coulomb potential in dependence on the parameters of the layer is proposed. In contrast to the common approach widely used in considerable literature, the proposed method allows to find the wave functions for all layers of the structure, both inside and outside the barrier layer. It was shown that increase of tunnel barrier transparency entails a transition from the dipolar electron-hole system (EHS) with a double-peak wave function of electrons to the spatially direct EHS. The proposed model takes into account the effect of the correlation interaction on the wave functions and the density of distribution of the carriers crosswise the layers. These calculations are useful for the analysis of many-particle nonequilibrium states occurring in low-dimensional structures.