The influence of carrier dynamics on double-state lasing in quantum dot lasers at variable temperature

16th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Korenev, V.V.^1 ; Savelyev, A.V.^1 ; Zhukov, A.E.^1,2 ; Omelchenko, A.V.^1 ; Maximov, M.V.^1,2

Saint-Petersburg Academic University RAS, Saint-Petersburg

194021, Russia^1

Ioffe Physico-Technical Institute RAS, Saint-Petersburg

194021, Russia^2

关键词: Analytical forms;    Charge carrier dynamics;    Desynchronization;    Ground state lasing;    Light current characteristics;    Single quantum dot;    Temperature dependence;    Variable temperature;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/572/1/012034/pdf
DOI  :  10.1088/1742-6596/572/1/012034

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

It is shown in analytical form that the carrier capture from the matrix as well as carrier dynamics in quantum dots plays an important role in double-state lasing phenomenon. In particular, the de-synchronization of hole and electron captures allows one to describe recently observed quenching of ground-state lasing, which takes place in quantum dot lasers operating in double-state lasing regime at high injection. From the other side, the detailed analysis of charge carrier dynamics in the single quantum dot enables one to describe the observed light-current characteristics and key temperature dependences.