Effect of the Inert Gas Adsorption on the Bilayer Graphene to the Localized Electron Magnetotransport

27th International Conference on Low Temperature Physics

Fukuda, A.^1 ; Terasawa, D.^1 ; Ohno, Y.^2 ; Matsumoto, K.^2

Department of Physics, Hyogo College of Medicine, 1-1 Mukogawacho, Hyogo, Nishinomiya

663-8501, Japan^1

Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka

567-0047, Japan^2

关键词: Bilayer Graphene;    Gate voltages;    Localized electrons;    Low temperatures;    Magneto-transport measurement;    Partial coverage;    Weak localization;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/568/5/052009/pdf
DOI  :  10.1088/1742-6596/568/5/052009

来源: IOP

【 摘 要 】

Graphene has a fascinating property that the two-dimensional electron gas is easily accessible externally and it is challenging to investigate the effects of the adsorption of inert gases on graphene, which may be the least effective chemically and physically. We carry out the magnetotransport measurements of4He-adsorbed bilayer graphene at low temperatures and the magnetic field B ranging from 0 to 4 T. The magnetoresistance ΔRxx change from the pristine graphene is measured as a function of gate voltage Vgand B for partial coverage of 1/10 (= 0.1) layers and one layer4He-adsorbed graphene. The overall magnitudes of ΔRxxfor one layer are larger than the one for 1/10 layers. Signs of ΔRxx depend on the Vgfor the entire range of B, associated with the magnetoresistance oscillation owing to the weak localization in the pristine graphene.