Deposition by liquid epitaxy and study of the properties of nano-heteroepitaxial structures with quantum dots for high efficient solar cells

18th International School on Condensed Matter Physics: "Challenges of Nanoscale Science: Theory, Materials, Applications"

Maronchuk, I.I.^1 ; Maronchuk, I.E.^1 ; Sankovitch, D.D.^1 ; Lovchinov, K.^2 ; Dimova-Malinovska, D.^2

Laboratory of Applied Physics and Nanotechnologies for the Energy Application, Sevastopol National University of Nuclear Energy and Industry, Str. Kurtchatova 7, Sevastopol

299033, Russia^1

Central Laboratory of Solar Energy and New Energy Sources, Academy of Sciences, Bulv. Tzarigradskao chaussee 72, Sofia

1784, Bulgaria^2

关键词: Heteroepitaxial structure;    High efficient;    Light concentration;    Photoluminescence spectrum;    Single junction solar cells;    Structural and optical properties;    Supersaturated solutions;    Technological conditions;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/558/1/012049/pdf
DOI  :  10.1088/1742-6596/558/1/012049

来源: IOP

【 摘 要 】

The paper presents experimental results showing the possibility of liquid-phase epitaxy with a pulse-cooled substrate nano-heteroepitaxial structures with Ge quantum dots and GaP matrix for production of single-junction solar cells working under sun light concentration. The preparation of the surface of Si wafers suitable for growing of these structures is described. The optimal technological conditions for growing of the of GaP buffer layer on the Si wafer from supersaturated solutions of melts Sn are applied. Structures with Ge quantum dots are grown at different conditions and study of their structural and optical properties is performed. The surface morphology of the grown materials is studied by AFM microscopy. The photoluminescence spectra of nano-heteroepitaxial structures with Ge quantum dots are presented and analyzed.