| 19th International School on Condensed Matter Physics: Advances in Nanostructured Condensed Matter: Research and Innovations | |
| Improvement of growing of Ge QDs by the method of liquid phase epitaxy | |
| Maronchuk, I.I.^1 ; Sanikovitch, D.D.^1 ; Cherkashin, A.S.^1 ; Nitchev, H.^2 ; Dimova-Malinovska, D.^2 | |
| Laboratory of Applied Physics and Nanotechnologies for the Energy Application, Sevastopol National University of Nuclear Energy and Industry, str. Kurtchatova, 7, Sevastopol | |
| 299033, Russia^1 | |
| Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, bulv. Tzarigradskao chaussee, 72, Sofia | |
| 1784, Bulgaria^2 | |
| 关键词: Heat transfer simulation; Heteroepitaxial structure; Homogeneous distribution; Improved structures; Liquid-phase epitaxial; Simulation program; Technological conditions; Thermal condition; | |
| Others : https://iopscience.iop.org/article/10.1088/1742-6596/794/1/012012/pdf DOI : 10.1088/1742-6596/794/1/012012 |
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| 来源: IOP | |
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【 摘 要 】
This paper reports on improvement of the technological conditions for nano-heteroepitaxial structures (NHES) growth with Ge quantum dots (QDs) by liquid phase epitaxial (LPE) method applying impulse cooling on the substrate (ICS) The physical and mathematic modeling of the processes of growth and the analysis of the thermodynamic status has been carried out to optimize the construction of the thermal unit, the located in it graphite cassette and of the thermal conditions. For the analysis the Solid Works Flow Simulation program is applied, which has a satisfactory accuracy of calculations of heat-transfer simulation. The analysis has revealed shortcomings in the construction of the equipment. Having in mind these results the equipment is reconstructed and new different elements of the thermal block are installed. Good agreement of the experimental and calculated temperature distribution in the process of NHES with Ge QDs growing is obtained. The grown Ge QDs have improved structure with homogeneous distribution and size and depth of the Quantum Wells. The experiments carried out show good reproducibility of the growing process confirming the correctness of the mathematic modeling.
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| Improvement of growing of Ge QDs by the method of liquid phase epitaxy | 1175KB |
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