Spectroscopic studies of SiOx films irradiated with high energy electrons

18th International School on Condensed Matter Physics: "Challenges of Nanoscale Science: Theory, Materials, Applications"

Dzhurkov, V.^1 ; Nesheva, D.^1 ; Scepanovic, M.^2 ; Nedev, N.^3 ; Kaschieva, S.^1 ; Dmitriev, S.N.^4 ; Popovic, Z.^2

Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd, Sofia

1784, Bulgaria^1

Center for Solid State Physics and New Materials, Institute of Physics, University of Belgrade, Pregrevica 118, Belgrade

11080, Serbia^2

Institute of Engineering, Autonomous University of Baja California, Benito Juarez Blvd. s/n, C.P.21280, B.C., Mexicali, Mexico^3

Joint Institute for Nuclear Research, Flerov Laboratory of Nuclear Reactions Dubna, Moscow Region

141980, Russia^4

关键词: Crystalline silicon substrates;    Fourier transform infrared absorption;    High-energy electron;    Nanoparticle growths;    Raman scattering spectroscopy;    Silicon nanoparticles;    Spectroscopic studies;    Vibrational properties;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/558/1/012045/pdf
DOI  :  10.1088/1742-6596/558/1/012045

来源: IOP

【 摘 要 】

The effect of 20 MeV electron irradiation on the vibrational properties of homogeneous SiOxfilms and SiOxfilms containing amorphous or crystalline Si nanoparticles is studied. Layers with x 1.15 and 1.3 and two different thicknesses, 200 nm and 1000 nm, were deposited on crystalline silicon substrates and annealed at 250 °C for stabilization. No nanoparticle growth occurs at this temperature. A part of the films were annealed in an inert atmosphere at 700 °C or 1000 °C for 60 min in order to grow amorphous (a-Si) or crystalline (nc-Si) silicon nanoparticles, respectively. Samples from all types of the films were irradiated with 20 MeV electrons at close to room temperature and a fluence of 2.4×1014el.cm-2. The effect of the irradiation was investigated by means of Fourier Transform Infrared Absorption (FTIR) and Raman scattering spectroscopy. The FTIR results show no appreciable changes in the composition of the homogeneous SiOxfilms and the oxygen content in the matrix of a-Si- SiOxcomposite films. The electron irradiation causes an increase of the intensity of the light scattered from the pure silicon phase. The results obtained are discussed in terms of disorder decrease in the Si nanoparticles stimulated by MeV electron beam irradiation.