Photoluminescence from 20 MeV electron beam irradiated homogeneous SiOx and composite Si-SiOx films

INERA Conference: Vapor Phase Technologies for Metal Oxide and Carbon Nanostructures

物理学;材料科学

Nesheva, D.^1 ; Šepanovi, M.^2 ; Gruji-Brojin, M.^2 ; Dzhurkov, V.^1 ; Kaschieva, S.^1 ; Bineva, I.^1 ; Dmitriev, S.N.^3 ; Popovi, Z.V.^2

Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd, Sofia

1784, Bulgaria^1

Center for Solid State Physics and New Materials, Institute of Physics, University of Belgrade, Pregrevica 118, Belgrade

11080, Serbia^2

Joint Institute for Nuclear Research, Flerov Laboratory of Nuclear Reactions, Moskow region, Dubna

141980, Russia^3

关键词: Amorphous nanoparticles;    Composite samples;    Crystalline nanoparticles;    Crystalline silicon substrates;    Crystalline silicons;    Nanoparticle sizes;    Photoluminescence intensities;    Room-temperature photoluminescence;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/764/1/012018/pdf
DOI  :  10.1088/1742-6596/764/1/012018

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

The effect of 20 MeV electron irradiation on the room temperature photoluminescence from homogeneous SiOxand composite Si-SiOxfilms, containing amorphous or crystalline Si nanoparticles, is studied. Layers with x = 1.5 and 1.7 and thickness of 200 nm were deposited on crystalline silicon substrates by thermal evaporation of SiO in vacuum. Film annealing in an inert atmosphere at 700oC or 1000oC for 60 min was applied to grow amorphous or crystalline silicon nanoparticles, respectively, in a SiOxmatrix. Samples from all types of films were irradiated with 20 MeV electrons at close to room temperature and a fluence of 2.4x1014el.cm-2. Photoluminescence was measured under excitation with the 488 nm line of an Ar+laser. The electron irradiation causes a decrease of the integrated photoluminescence intensity in composite samples with initial x = 1.7 containing amorphous or crystalline nanoparticles and x = 1.5 samples with Si nanocrystals. The electron irradiation of x = 1.5 samples with amorphous nanoparticles slightly increases the photoluminescence intensity. The obtained results are discussed in terms of electron beam induced phase separation and Si nanoparticle size increase.