Calculation of the spatial distribution of defects and cascade- probability functions in the materials

International Congress on Energy Fluxes and Radiation Effects

Kupchishin, A.I.^1 ; Kupchishin, A.A.^2 ; Shmygalev, E.V.^2 ; Shmygaleva, T.A.^2 ; Tlebaev, K.B.^2

Al-Farabi Kazakh National University, al-Farabi av.71, Almaty

050012, Kazakhstan^1

Abai Kazakh National Pedagogical University, Dostyk av.13, Almaty

050010, Kazakhstan^2

关键词: Depth distribution;    Implanted ions;    Loss of energy;    Probability functions;    Simulation and analysis;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/552/1/012047/pdf
DOI  :  10.1088/1742-6596/552/1/012047

来源: IOP

【 摘 要 】

In this article we carried out the calculations of the depth distribution of implanted ions of arsenic and indium, loss of energy and cascade-probability functions in silicon. Comparison of the calculations with the experimental data is in the satisfactory agreement. The computer simulation and analysis of the characteristics of ions depending on the depth of penetration and the number of interactions were carried out.